Active Optical Communication
| Overview |
This InGaAs/InP avalanche photodiode (APD) chip was designed for 10Gbps optical communication, especially 10G EPON application. Using this chip, an optical receiver with a high sensitivity can be achieved. |
|---|---|
| Features |
Very high reliability |
| Application | 10Gbps optical receiver Long-haul networks Datacom and telecom 10G EPON |
25G PIN 1×4 Arrayed Chip WOS-E-1330-31 R0.pdf(418.6K)
25G PIN Chip on Carrier WOS-E-1330-30 R1.pdf(285.8K)
25G PIN Chip 1ch front 20um WOS-E-1330-33 R2.pdf(805.5K)
25G PIN Chip 1ch front 16um WOS-E-1330-37 R0.pdf(808.2K)
25G PIN Chip with backside lens 20um WOS-E-1330-36 R1.pdf(551.7K)
200um APD Chip WOS-E-1330-20 R1.pdf(249.6K)
Large Area PD – 1mm WOS-E-1330-07.pdf(301.5K)
Large Area PD – 2mm WOS-E-1330-08.pdf(249.4K)
Large Area PD – 3mm WOS-E-1330-09.pdf(247.1K)
mPD300 Chip WOS-E-1320-21.pdf (263.0K)
10G APD Chip on Carrier WOS-E-1330-16 R2.pdf(291.7K)