特徴
– 帯域幅は最大200MHz
– ブリュースター角デザイン波長 @ 780nm
– 630 – 110nm内でのR_avg < 1%（典型的）
– ビームの変位なし
– 高透過率、T>98%（典型的）
– 高光学出力用のモデル
– 調整が容易な標準的な大口径
– 減衰された圧電および音響共振
代表的なアプリケーション
- Interferometry
- Q-Switch
- Laser frequency stabilisation (intra cavity)
- Intensity control (Mach-Zehnder)
- Broadband phase modulation
| PS2M-NIR | PS2.5M-BC | PS3D-BC | |
| Housing |  | | |
| Bandwidth (MHz) | ~0 … >100 | ~0 … >100 | ~0 … >100 |
| Capacitance (pf) | ~8 | ~4 | ~18 |
| Anti reflection | AR coating | Brewster cut | Brewster cut |
| Beam displacement | w/o | w/o | w/o |
| Number of crystals | 1 | 2 | 2 |
| Reflectivity @ 630-1100nm | R_avg < 1% | R_avg < 0.2% | R_avg < 0.2% |
| Clear aperture (mm²) | 2×2 | 2.5×2.5 | 3×3 |
| Halfwave voltage (V) @ 1064nm | 250 +/- 10% | 850 +/- 10% | 1.3kV +/- 10% |
| HV connector | 2x pin (D2mm) | 2x pin (D2mm) | 2x pin (D2mm) |
| Max. voltage (kV) | +/- 4 | +/- 4 | +/- 4 |
| Housing material | plastic (POM) | plastic (POM) | plastic (POM) |
| EMC | unshielded | unshielded | unshielded |
| Dimensions (mm³) | 45x30x15 | 45x30x15 | 75x30x15 |
以下のフォームからQUBIG製品の問い合わせが可能です。
選択可能なオプション
T-control: +TXC allows T-ctrl. & stabilisation of EOMs for active cooling of high power models & active RAM suppression incl. therm. mounting, T-sensor, TEC requires separate Temp.-controller compatible with several housing types |  |
| Custom AR: +AR custom specific AR coatings typ. R < 0.1% for single wavelength multi-wavelength AR available AR for high power applications |  |