特徴
– 帯域幅は最大500MHz
-NIR BBAR @ 630 – 110nm内でのR_avg < 1%(典型的)
– 高透過率、T>98%(典型的)
– 高光学出力用のモデル
– 調整が容易な標準的な大口径
– 減衰された圧電および音響共振
代表的なアプリケーション
- Interferometry
- Q-Switch
- Laser frequency stabilisation (intra cavity)
- Intensity control (Mach-Zehnder)
- Broadband phase modulation
PSA2M-NIR | PSA2.5M-BC | PSA3M-NIR +P2 | icPSA2x4-NIR | |
Housing | ||||
Bandwidth (MHz) | ~0 … >100 | ~0 … >100 | ~0 … >100 | ~0 … >100 |
Capacitance (pf) | ~12 | ~8 | ~8 | ~8 |
Anti reflection | AR coating | Brewster cut | AR coating | AR coating |
Beam displacement | w/o | w/o | w/o | w/o |
Number of crystals | 1 | 2 | 1 | 1 |
Reflectivity @ 630 – 1100nm | R_avg < 1% | R_avg < 0.2% | R_avg < 1% | R_avg < 1% |
Clear aperture (mm²) | 2×2 | 2.5×2.5 | 3×3 | 2×4 |
Halfwave voltage (V) @ 780nm | 250 +/- 10% | 850 +/- 10% | 730 +/- 10% | 900 +/- 10% |
HV connector(s) | SMA-f | SMA-f | SMA-f | MMCX-f |
Max. voltage (V) | +/-500 | +/-500 | +/-500 | +/-500 |
Housing material | metal (Alu) | metal (Alu) | metal (Alu) | metal (Alu) |
EMC | shielded | shielded | shielded | shielded |
Dimensions (mm³) | 45x30x15 | 45x30x15 | 25x25x20 | 12×17.5×25 |
以下のフォームからQUBIG製品の問い合わせが可能です。
選択可能なオプション
Floating Electrodes: +2P differential voltage operation two RF inputs (SMA) HV option available compatible with several housing types | |
T-control: +TC allows T-ctrl. & stabilisation of EOMs for active cooling of high power models incl. T-sensor (PT1000 or NTC10k), TEC requires separate Temp.-controller compatible with several housing types | |
Custom AR: +AR custom specific AR coatings typ. R < 0.1% for single wavelength multi-wavelength AR available AR for high power applications |