CRYLIGHT 社製　Laser Crystals

 

各モデルの抜粋仕様を下記から確認いただけます。

Nd-YVO4 CrystalNd-GdVO4 CrystalTi-Sapphire CrystalYb-YAG CrystalNd-YAG Crystal

Nd-YVO4 Crystal

Specifications

Capabilities of Nd:YVO4 Crystal: 

Nd dopant: 0.27%, 0.3%, 0.4%, 0.5%, 0.7%, 1.0%, 2.0%, 3.0%
Width x Height: 1×1 ~ 16x16mm
Length: 0.02 ~ 20mm

Specifications of Nd:YVO4 Crystal:

Orientation: a-cut( ± 0.5° )
Dimensional Tolerance: +/-0.1mm
Wavefront Distortion: <λ/8 at 633nm
Surface Quality: 20/10
Parallelism: < 10 arc seconds
Perpendicularity: < 5 arc minutes
Surface Flatness: <λ/10 at 632.8nm
Clear Aperture: Central 95%
Chamfer: 0.15×45°
Coating: 1.AR@1064nm R<0.1%
2.AR@1064nm R< 0.1% & HT@808nm T>95% 
3.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95%

Properties of Nd:YVO4 Crystal: 

Atomic Density ~1.37×1020 atoms/cm2
Crystal Structure Zircon Tetragonal, space group D4h, a=b=7.12, c=6.29
Density 4.22 g/cm3
Mohs Hardness Glass-like, ~5
Thermal Expansion Coefficient aa=4.43×10-6/K, ac=11.37×10-6/K
Thermal Conductivity Coefficient ||C: 5.23 W/m/K; ^C: 5.10 W/m/K

Lasing Wavelengths 914nm, 1064 nm, 1342 nm
Crystal Class positive uniaxial, no=na=nb ne=nc
no=1.9573, ne=2.1652, @ 1064nm
no=1.9721, ne=2.1858, @ 808nm
no=2.0210, ne=2.2560, @ 532nm
Thermal Optical Coefficient dna/dT=8.5×10-6/K, dnc/dT=3.0×10-6/K
Stimulated Emission Cross-Section 25.0×10-19 cm2 , @1064 nm
Fluorescent Lifetime 90μs(about 50μs for 2 atm% Nd doped) @ 808 nm
Absorption Coefficient 31.4 cm-1 @ 808 nm
Absorption Length 0.32 mm @ 808 nm
Intrinsic Loss Less 0.1% cm-1 , @1064 nm
Gain Bandwidth 0.96 nm (257 GHz) @ 1064 nm
Polarized Laser Emission p parallel to optic axis (c-axis)
Diode Pumped Optical to Optical Efficiency > 60%

Sellmeier Equation (for pure YVO4 crystals)
no2=3.77834+0.069736/(λ2 – 0.04724) – 0.0108133λ2
no2=4.59905+0.110534/(λ2 – 0.04813) – 0.0122676λ2 

 

Nd-GdVO4 Crystal

 
Features
 
Neodymium doped Gadolinium Vanadate (Nd:GdVO4 Crystals) is an excellent ideal laser host material for the DPSS (Diode pumped Solid State) micro/mini lasers due to its good physical, optical and mechanical properties. It offers higher slope efficiency than Nd:YAG crystal and better thermal conductivity, higher power output than Nd:YVO4 crystal.
 
Specifications
 
Capabilities:

Nd dopant: 0.2 ~ 3 atm%
Width x Height: 1×1 ~ 16x16mm
Length: 0.02 ~ 20mm

Specifications:

Orientation: a-cut( ± 0.55° )
Dimensional Tolerance: +/-0.1mm
Wavefront Distortion: <λ/8 at 632.8nm
Surface Quality: 20/10
Parallelism: < 10 arc seconds
Perpendicularity: < 5 arc minutes
Surface Flatness: <λ/10 at 632.8nm
Clear Aperture: Central 95%
Chamfer: 0.15×45°
Coating: 1.AR@1064nm R<0.1%
2.AR@1064nm R< 0.1% & HT@808nm T>95%
3.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95%

Properties: 

Crystal Structure Zircon Tetragonal, space group D4h, a=b=7.21, c=6.35
Melting Point 1780°C
Density 5.47g/cm3
Mohs Hardness Glass-like, ~ 5
Thermal Expansion Coefficient aa=1.5×10-6/K, ac=7.3×10-6/K
Thermal Conductivity Coefficient 11.7 W/m/K <110>

Peak Absorption Wavelength 808.5 nm
Lasing Wavelength 912.6 nm, 1063.1 nm, 1341.3 nm
Crystal Class positive uniaxial, no=na=nb ne2=nc
no=1.9854, ne2=2.1981, @ 1064nm
no=2.038184, ne2=2.292962, @ 532nm
no=1.9977322, ne2=2.219864, @ 808nm
Thermal Optical Coefficient dn/dT=4.7×10-6/K
Stimulated Emission Cross-Section 7.60×10-19cm2 , @1064 nm
Fluorescent Lifetime 95 ms (1 atm% nd doped) @ 808 nm
Loss Coefficient 0.003 cm-1@ 1064 nm
Absorption Coefficient 74 cm-1 @ 808 nm (1.2%)
Absorption Length 0.32 mm @ 808 nm
Intrinsic Loss Less 0.1% cm-1 , @1064 nm
Line width 0.6 nm
Polarized Laser Emission p parallel to optic axis (c-axis)
Diode Pumped Optical to OpticalEfficiency > 60%

Sellmeier Equation (for pure GdVO4 crystals)
ne2=4.734369+0.1216149/(λ2 – 0.0523664) – 0.013927λ2 
no2=3.8987165+0.05990622/(λ2 – 0.0514395) – 0.011319λ2 

 

 Ti-Sapphire Crystal

Features
Titanium doped Sapphire crystal is a most widely used crystal for wavelength tunable lasers. It is also an excellent medium capable of generating ultrashort pulse, high gain and high power lasing. Pulsed, quasi-cw, cw, ps and fs lasing with high efficiency.
 
Specifications
Ti2O3 concetration: 0.03-0.48wt%
Figure of Merit: 100 ~ 300
Diameter: 2 ~ 80mm
Length: 2 ~ 130mm
End Configuration: Plano/Plano or Brewst/Brewst or Specified

Specifications:

Orientation: Optical axis C normal to rod axis
a490: 1.0 ~ 7.5cm-1
Flatness: <λ/10 at 632.8nm
Surface Quality: 20/10
Parallelism: < 10 arc seconds
Wavefront Distortion: <λ/4 at 632.8nm

Properties: 

Chemical Formula Ti3+: Al2O3
Crystal Structure Hexagonal
Melting Point 2050 °C
Density 3.98 g/cm3
Mohs Hardness 9
Thermal Conductivity 0.11 cal/(°C x sec x cm)
Specific Heat 0.10 cal/g

Laser Action 4-Level Vibronic
Lattice Constants a = 4.748, c = 12.957
Fluorescence Lifetime 3.2 μsec (T = 300 K)
Tuning Range 660-1050 nm
Absorbtion Range 400-600 nm
Emission Peak 795 nm
Absorption Peak 488 nm
Refractive Index 1.76 @ 800 nm

 

Yb-YAG Crystal

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Features
Very low fractional heating, less than11% 
Very high slope efficiency 
Broad absorption bands, about 8nm@940nm 
No excited-state absorption or up-conversion 
Conveniently pumped by reliable InGaAs diodes 
at 940nm(or 970nm) 
High thermal conductivity 
Large mechanical strength 
High optical quality
 
Specifications
 
Capabilities:

Nd dopant: 0.7 ~ 30 atm%
Diameter: 2 ~ 20mm
Length: 1 ~ 70mm

Specifications:

Orientation: <111>( ± 5° )
Dimensional Tolerance: +/-0.1mm
Wavefront Distortion: <λ/8 at 632.8nm
Surface Quality: 20/10
Parallelism: < 10 arc seconds
Perpendicularity: < 5 arc minutes
Surface Flatness: <λ/10 at 632.8nm
Clear Aperture: Central 95%
Chamfer: 0.15×45°
Coating: 1.HR@940nm R>99.8% + AR@1060nm R<0.2%
2.AR@940nm R<0.2% + HR@1060nm R>99.8%

Properties: 

Chemical Formula Yb:Y3Al5O12
Crystal Structure Cubic
Lattice Constants 12.01Ä
Melting Point 1970℃
Density 4.56 g/cm3
Mohs Hardness 8.5
Thermal Expansion Coefficient 7.8×10-6 /K , [111], 0-250℃
Thermal Conductivity 14 W.s /m /K @ 20℃

Loss Coefficient 0.003 cm-1
Index of Refraction 1.82
Lasing Wavelength 1030 nm
Pump Wavelength 940 nm
Absorption band about pump wavelengt 10 nm

Nd-YAG Crystal

Features
 High gain 
Low threshold 
High efficiency 
Low loss 
Suitable for different modes of operation (cw, pulsed , Q-switched, 
mode locked, doubling of frequency ) 
Suitable for high-average power lasers 
Good thermal conductivity and thermal shock characteristics 
Large mechanical strength 
High optical quality 
 
Specifications
 
Capabilities:

Yb dopant: 0.6 ~ 1.3 atm%
Diameter: 3 ~ 14mm
Length: 1 ~ 160mm

Specifications:

Orientation: <111> or <100> within 5°
Dimensional Tolerance: +/-0.1mm
Wavefront Distortion: <λ/8 at 633nm
Surface Quality: 20/10
Parallelism: < 10 arc seconds
Perpendicularity: < 5 arc minutes
Surface Flatness: <λ/10 at 633nm
Clear Aperture: Central 95%
Chamfer: 0.15×45°
Coating: 1.AR@1064nm R<0.2%
2.AR@1064nm R< 0.2% & HT@808nm T>95%
3.HR@1064nm R>99.8% & HT@808nm T>95%
4.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95%

Properties: 

Chemical Formula Nd:Y3A15O12
Crystal Structure Cubic
Lattice Constants 12.01Ä
Concentration ~ 1.2 x 1020 cm-3
Melting Point 1970 °C
Density 4.56 g/cm3
Mohs Hardness 8.5
Refractive Index 1.82
Thermal Expansion Coefficient 7.8 x 10-6 /K [111], 0 – 250 °C
Thermal Conductivity 14 W/m /K @20 °C, 10.5 W /m /K @100 °C.

Lasing Wavelength 1064 nm
Stimulated Emission Cross Section 2.8×10-19 cm-2
Relaxation Time of Terminal Lasing Level 30 ns
Radiative Lifetime 550 ms
Spontaneous Fluorescence 230 ms
Loss Coefficient 0.003 cm-1 @ 1064 nm
Effective Emission Cross Section 2.8 x 10-19 cm2
Pump Wavelength 807.5 nm
Absorption band at pump wavelength 1 nm
Linewidth 0.6 nm
Polarized Emission Unpolarized
Thermal Birefringence High